LOGO
LOGO
FP75R12KT4BOSA1 Image

img for reference only

Mfr. #:
FP75R12KT4BOSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Module Trench Field Stop Three Phase Inverter 1200 V 75 A 385 W Base Mount Module
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series EconoPIM? 3
Package Tray
IGBT Type Trench Field Stop
Configuration Three Phase Inverter
Voltage - Collector Emitter Breakdown (max) 1200 V
Current - Collector (Ic) (max) 75 A
Power - max 385 W
Vce(on) (max) 2.25V @ 15V, 75A
Current - Collector Cutoff (max) 1 mA
Input Capacitance (Cies) 4.3 nF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package/Case Module
Supplier Device Package Module
Related models
  • IPP90R1K2C3XKSA1

    Power MOSFET, N-Channel, 900 V, 5.1 A, 0.94 ohm, TO-220, Through Hole

  • AUIRFS3206

    Power MOSFET, N-Channel, 60 V, 120 A, 0.0024 ohm, TO-263AB, Surface Mount

  • IRLR3802PBF

    Power MOSFET, N-Channel, 12 V, 84 A, 0.0085 ohm, TO-252 (DPAK), Surface Mount

  • IRFB42N20DPBF

    Power MOSFET, N-channel, 200 V, 42.6 A, 0.055 ohm, TO-220AB, Through Hole

  • AUIRFS4410Z

    Power MOSFET, N-Channel, 100 V, 97 A, 0.0072 ohm, TO-263AB, Surface Mount

  • IRF7506TRPBF

    Dual MOSFET, P-Channel, 30 V, 1.7 A, 0.27 ohm, μSOIC, Surface Mount

  • IPB009N03LGATMA1

    Power MOSFET, N-channel, 30 V, 180 A, 700 μohm, TO-263 (D2PAK), Surface mount

  • IRL2203NPBF

    Power MOSFET, N-Channel, 30 V, 100 A, 0.007 ohm, TO-220AB, Through Hole

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd