LOGO
LOGO
SPW35N60CFDFKSA1 Image

img for reference only

Mfr. #:
SPW35N60CFDFKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 34.1A (Tc) 313W (Tc) PG-TO247-3-1
Datasheet:
In Stock:
381
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series CoolMOS?
Package Device
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 34.1A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 118 mOhm @ 21.6A, 10V
Vgs(th) (max) at Id 5V @ 1.9mA
Gate Charge?(Qg) (max) at Vgs 212 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (Max) 5060 pF @ 25 V
FET Function -
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1
Package/Case TO-247-3
Related models
  • IRF8302MTRPBF

    Power MOSFET, N-Channel, 30 V, 190 A, 0.0014 ohm, WDSON, SMT

  • IRFU5410PBF

    Power MOSFET, P-Channel, 100 V, 13 A, 0.205 ohm, TO-251AA, Through Hole

  • IPN80R600P7ATMA1

    Power MOSFET, N-Channel, 800 V, 8 A, 0.51 ohm, SOT-223, Surface Mount

  • BSC070N10LS5ATMA1

    Power MOSFET, N-Channel, 100 V, 79 A, ​​0.006 ohm, TDSON, Surface Mount

  • IPZ60R099C7XKSA1

    Power MOSFET, N-Channel, 600 V, 22 A, 0.085 ohm, TO-247, Through Hole

  • IPB60R145CFD7ATMA1

    Power MOSFET, N-Channel, 600 V, 16 A, 0.127 ohm, TO-263 (D2PAK), Surface Mount

  • IPAN60R600P7SXKSA1

    Power MOSFET, N-channel, 600 V, 6 A, 0.49 ohm, TO-220FP, Through Hole

  • IPD35N12S3L24ATMA1

    Power MOSFET, N-Channel, 120 V, 35 A, 0.02 ohm, TO-252 (DPAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd