IMZA65R039M1HXKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IMZA65R039M1HXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 650 V 50A (Tc) 176W (Tc) PG-TO247-4-3

Datasheet:

In Stock:

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolSiC?
Package	Tube
FET Type	N-channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	50 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	18 V
On-Resistance (max) at Id, Vgs	50 mOhm @ 25 A, 18 V
Vgs(th) (max) at Id	5.7 V @ 7.5 mA
Gate Charge?(Qg) (max) at Vgs	41 nC @ 18 V
Vgs (max)	20V, -2V
Input Capacitance (Ciss) (Max) at Different Vds	1393 pF @ 400 V
FET Function	-
Power Dissipation (Max)	176W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-4-3
Package/Case	TO-247-4

SPA11N60C3XKSA1

Infineon, CoolMOS C3 series, MOSFET, NMOS, TO-220 FP package
IRFH8337TR2PBF

Infineon, HEXFET series, MOSFET, NMOS, PQFN package
AUIRFP4004

Infineon, HEXFET series, MOSFET, NMOS, TO-247AC package
IPB117N20NFDATMA1

Infineon, OptiMOS FD series, MOSFET, NMOS, D2PAK (TO-263) package
IRF3710ZPBF

Infineon, HEXFET series, MOSFET, NMOS, TO-220AB package
SPP15P10PLHXKSA1

Infineon, SIPMOS series, MOSFET, PMOS, TO-220 package
IRFL014NPBF

Infineon, HEXFET series, MOSFET, NMOS, SOT-223 package
IRFR3411TRPBF

Infineon, HEXFET series, MOSFET, NMOS, DPAK (TO-252) package