IMZA120R020M1HXKSA1 Infineon | Infineon agency

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Mfr. #：

IMZA120R020M1HXKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 1200 V 98A (Tc) 375W (Tc) PG-TO247-4-8

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolSiC?
Package	Tube
FET Type	N-channel
Technology	SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss)	1200 V
Current at 25°C - Continuous Drain (Id)	98A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	15V, 18V
On-Resistance (max) at Id, Vgs	26.9 mOhm @ 41A, 18V
Vgs(th) (max) at Id	5.2V @ 17.6mA
Gate Charge?(Qg) (max) at Vgs	83 nC @ 18 V
Vgs (max)	20V, -5V
Input capacitance (Ciss) (max) at different Vds	3460 nF @ 25 V
FET function	-
Power dissipation (max)	375W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO247-4-8
Package/case	TO-247-4

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