LOGO
LOGO
IPP050N10NF2SAKMA1 Image

img for reference only

Mfr. #:
IPP050N10NF2SAKMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 19.4A (Ta), 110A (Tc) 3.8W (Ta), 150W (Tc) PG-TO220-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Series StrongIRFET? 2
Packaging Tubes
Available
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 19.4A (Ta), 110A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 6V, 10V
On-Resistance (Max) at Different Id, Vgs 5 milliohms @ 60A, 10V
Vgs(th) (Max) at Different Id 3.8V @ 84μA
Gate Charge?(Qg) (Max) at Different Vgs 76 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 3600 pF @ 50 V
FET function -
Power dissipation (max) 3.8W (Ta), 150W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3
Package/case TO-220-3
IPP050M
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd