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AUIRFB8405 Image

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Mfr. #:
AUIRFB8405
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 40 V 120A (Tc) 163W (Tc) TO-220AB
Datasheet:
In Stock:
1000
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Series HEXFET?
Packaging Tubes
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 40 V
Current at 25°C - Continuous Drain (Id) 120A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 2.5 milliohms @ 100A, 10V
Vgs(th) (max) at Id 3.9V @ 100μA
Gate Charge?(Qg) (max) at Vgs 161 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 5193 pF @ 25 V
FET function -
Power dissipation (max) 163W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
AUIRFB8405
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