IPW60R024P7XKSA1 Infineon | Infineon agency

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Mfr. #：

IPW60R024P7XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 650 V 101A (Tc) 291W (Tc) PG-TO247-3-41

Datasheet:

In Stock:

160

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	CoolMOS? P7
Package	Device
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	101A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	24 milliohms @ 42.4A, 10V
Vgs(th) (max) at Id	4V @ 2.03mA
Gate Charge?(Qg) (max) at Vgs	164 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	7144 pF @ 400 V
FET Function	-
Power Dissipation (Max)	291W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package/Case	TO-247-3

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