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ISC230N10NM6ATMA1 Image

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Mfr. #:
ISC230N10NM6ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N-channel 100 V 7.7A (Ta), 31A (Tc) 3W (Ta), 48W (Tc) PG-TDSON-8 FL
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 7.7 A (Ta), 31 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 8 V, 10 V
On-Resistance (Max) at Different Id, Vgs 23 mOhm @ 10 A, 10 V
Vgs(th) (Max) at Different Id 3.3 V @ 13 μA
Gate Charge?(Qg) (Max) at Different Vgs 9.3 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 690 pF @ 50 V
FET function -
Power dissipation (max) 3W (Ta), 48W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TDSON-8 FL
Package/case 8-PowerTDFN
ISC230N
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