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IPA105N15N3GXKSA1 Image

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Mfr. #:
IPA105N15N3GXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 150 V 37A (Tc) 40.5W (Tc) PG-TO220-FP
Datasheet:
In Stock:
77
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Family OptiMOS?
Packaging Tubes
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 37A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 8V, 10V
On-Resistance (Max) at Different Id, Vgs 10.5 mOhm @ 37A, 10V
Vgs(th) (Max) at Different Id 4V @ 160μA
Gate Charge?(Qg) (Max) at Different Vgs 55 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 4300 pF @ 75 V
FET function -
Power dissipation (max) 40.5W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-FP
Package/case TO-220-3 Complete package
IPA105
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