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IRF300P227 Image

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Mfr. #:
IRF300P227
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 300 V 50A (Tc) 313W (Tc) PG-TO247-3
Datasheet:
In Stock:
401
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series StrongIRFET?
Package Tube
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 300 V
Current at 25°C - Continuous Drain (Id) 50 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 40 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id 4 V @ 270 μA
Gate Charge?(Qg) (max) at Vgs 107 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 4893 pF @ 50 V
FET Function -
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package/Case TO-247-3
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