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IRFB3207ZPBF Image

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Mfr. #:
IRFB3207ZPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 75 V 120A (Tc) 300W (Tc) TO-220AB
Datasheet:
In Stock:
10676
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Series HEXFET?
Packaging Tubes
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 75 V
Current at 25°C - Continuous Drain (Id) 120 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 4.1 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id 4 V @ 150 μA
Gate Charge?(Qg) (max) at Vgs 170 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 6920 pF @ 50 V
FET Function -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
IRFB3207
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