IPP65R190E6XKSA1 Infineon | Infineon agency

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Mfr. #：

IPP65R190E6XKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 650 V 20.2A (Tc) 151W (Tc) PG-TO220-3

Datasheet:

In Stock:

580

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
Family	CoolMOS?
Packaging	Tubes
	Not for new designs
FET Type	N-channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	650 V
Current at 25°C - Continuous Drain (Id)	20.2A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	190 mOhm @ 7.3A, 10V
Vgs(th) (max) at Id	3.5V @ 730μA
Gate Charge?(Qg) (max) at Vgs	73 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	1620 pF @ 100 V
FET function	-
Power dissipation (max)	151W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Through hole
Supplier device package	PG-TO220-3
Package/case	TO-220-3
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