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IPP60R120P7XKSA1 Image

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Mfr. #:
IPP60R120P7XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 26A (Tc) 95W (Tc) PG-TO220-3
Datasheet:
In Stock:
32
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Series CoolMOS? P7
Packaging Tubes
Available
FET Type N-channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 26A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (Max) at Different Id, Vgs 120 mOhm @ 8.2A, 10V
Vgs(th) (Max) at Different Id 4V @ 410μA
Gate Charge?(Qg) (Max) at Different Vgs 36 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 1544 pF @ 400 V
FET function -
Power dissipation (max) 95W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO220-3
Package/case TO-220-3
IPP60R120
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