IRL7833PBF Infineon | Infineon agency

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Mfr. #：

IRL7833PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 30 V 150A (Tc) 140W (Tc) TO-220AB

Datasheet:

In Stock:

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
Series	HEXFET?
Packaging	Tubes
	Available
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	30 V
Current at 25°C - Continuous Drain (Id)	150A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4.5V, 10V
On-Resistance (Max) at Different Id, Vgs	3.8 milliohms @ 38A, 10V
Vgs(th) (Max) at Different Id	2.3V @ 250μA
Gate Charge?(Qg) (Max) at Different Vgs	47 nC @ 4.5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	4170 pF @ 15 V
FET function	-
Power dissipation (max)	140W (Tc)
Operating temperature	-55°C ~ 175°C (TJ)
Mounting type	Through hole
Supplier device package	TO-220AB
Package/case	TO-220-3
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