LOGO
LOGO
IKQ120N60TAXKSA1 Image

img for reference only

Mfr. #:
IKQ120N60TAXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT Trench Field Stop 600 V 160 A 833 W Through Hole PG-TO247-3-46
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, TrenchStop?
Package Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (max) 600 V
Current - Collector (Ic) (max) 160 A
Current - Collector Pulse (Icm) 480 A
Vce(on) (max) for Vge, Ic 2V @ 15V, 120A
Power - max 833 W
Switching Energy 4.1mJ (on), 2.8mJ (off)
Input Type Standard
Gate Charge 772 nC
25°C Td (on/off) value 33ns/310ns
Test conditions 400V, 120A, 3 ohm, 15V
Reverse recovery time (trr) 280 ns
Operating temperature -40°C ~ 175°C (TJ)
Mounting type Through hole
Package/case TO-247-3
Supplier device package PG-TO247-3-46
Related models
  • IRF7907TRPBF

    Dual MOSFET, N-channel, 30 V, 30 V, 11 A, 11 A, 0.0098 ohm

  • IRFR1018ETRPBF

    Power MOSFET, N-Channel, 60 V, 79 A, ​​0.0071 ohm, TO-252AA, Surface Mount

  • BSL308CH6327XTSA1

    Dual MOSFET, Complementary N and P channel, 30 V, 30 V, 2.3 A, 2.3 A, 0.044 ohm

  • IRFH7932TRPBF

    Power MOSFET, HEXFET?, N-Channel, 30 V, 25 A, 0.0025 ohm, QFN, Surface Mount

  • IRF3808STRLPBF

    Power MOSFET, N-Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount

  • IPD60R400CEAUMA1

    Power MOSFET, N-channel, 600 V, 14.7 A, 0.34 ohm, TO-252 (DPAK), Surface mount

  • IPU60R2K1CEAKMA1

    Power MOSFET, N-channel, 600 V, 3.7 A, 1.8 ohm, TO-251, Through Hole

  • IPB60R120P7ATMA1

    Power MOSFET, N-Channel, 600 V, 26 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd