IRGS4630DPBF Infineon | Infineon agency

img for reference only

Mfr. #：

IRGS4630DPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT 600 V 47 A 206 W Surface Mount D2PAK

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (max)	600 V
Current - Collector (Ic) (max)	47 A
Current - Collector Pulse (Icm)	54 A
Vce(on) (max) at Vge, Ic	1.95V @ 15V, 18A
Power - max	206 W
Switching Energy	95μJ (on), 350μJ (off)
Input Type	Standard
Gate Charge	35 nC
Td (on/off) at 25°C	40ns/105ns
Test Conditions	400V, 18A, 22 Ohm, 15V
Reverse recovery time (trr)	100 ns
Operating temperature	-40°C ~ 175°C (TJ)
Mounting type	Surface mount
Package/case	TO-263-3, D2Pak (2-lead tab), TO-263AB
Supplier device package	D2PAK

TLI4970D025T5XUMA1

Current sensor, SPI, 18 kHz, TISON, 8-pin, 3.1 V, 3.5 V
BSC057N08NS3GATMA1

Power MOSFET, N-Channel, 80 V, 100 A, 0.0047 ohm, TDSON, SMT
IPB120P04P4L03ATMA1

Power MOSFET, P-Channel, 40 V, 120 A, 0.0026 ohm, TO-263 (D2PAK), Surface Mount
IRF7103TRPBF

Dual MOSFET, N-Channel, 50 V, 3 A, 0.11 ohm, SOIC, Surface Mount
IRF9540NPBF

Power MOSFET, P-Channel, 100 V, 23 A, 0.117 ohm, TO-220AB, Through Hole
IRF4905STRLPBF

Power MOSFET, P-Channel, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Surface Mount
BSC059N04LSGATMA1

Power MOSFET, N-Channel, 40 V, 73 A, 0.0049 ohm, PG-TDSON, SMT
IRF5210PBF

Power MOSFET, P-Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole