LOGO
LOGO
IRFB3306GPBF Image

img for reference only

Mfr. #:
IRFB3306GPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 120A (Tc) 230W (Tc) TO-220AB
Datasheet:
In Stock:
1507
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 120 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 4.2 mOhm @ 75 A, 10 V
Vgs(th) (max) at Id 4 V @ 150 μA
Gate Charge?(Qg) (max) at Vgs 120 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 4520 pF @ 50 V
FET Function -
Power Dissipation (Max) 230W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package/Case TO-220-3
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd