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IPAN60R280PFD7SXKSA1 Image

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Mfr. #:
IPAN60R280PFD7SXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 12A (Tc) 24W (Tc) PG-TO220-FP
Datasheet:
In Stock:
2872
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Packaging Device
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 12 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 280 mOhm @ 3.6 A, 10 V
Vgs(th) (max) at Id 4.5 V @ 180 μA
Gate Charge?(Qg) (max) at Vgs 15.3 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 656 pF @ 400 V
FET Function -
Power Dissipation (Max) 24W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package/Case TO-220-3 Full Package
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