IRF1404PBF Infineon | Infineon agency

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Mfr. #：

IRF1404PBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 40 V 202A (Tc) 333W (Tc) TO-220AB

Datasheet:

In Stock:

2336

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
	HEXFET?
Packaging	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	202A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	4 milliohms @ 121A, 10V
Vgs(th) (max) at Id	4V @ 250μA
Gate Charge?(Qg) (max) at Vgs	196 nC @ 10 V
Vgs (max)	±20V
Various Vds Input Capacitance (Ciss) (Max)	5669 pF @ 25 V
FET Function	-
Power Dissipation (Max)	333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

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