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IRLU3410PBF Image

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Mfr. #:
IRLU3410PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 100 V 17A (Tc) 79W (Tc) IPAK (TO-251AA)
Datasheet:
In Stock:
4995
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 17 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4 V, 10 V
On-Resistance (max) at Id, Vgs 105 mOhm @ 10 A, 10 V
Vgs(th) (max) at Id 2 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 34 nC @ 5 V
Vgs (max) ±16 V
Various Vds Input Capacitance (Ciss) (max) 800 pF @ 25 V
FET Function -
Power Dissipation (max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251AA)
Package/Case TO-251-3 Short Lead, IPak, TO-251AA
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