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IRFB4019PBF Image

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Mfr. #：
IRFB4019PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 150 V 17A (Tc) 80W (Tc) TO-220AB
Datasheet:
Datasheet
In Stock:
731
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
-
Packaging Tubes
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 150 V
Current at 25°C - Continuous Drain (Id) 17 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 95 mOhm @ 10 A, 10 V
Vgs(th) (max) at Id 4.9 V @ 50 μA
Gate Charge (Qg) (max) at Vgs 20 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 800 pF @ 50 V
FET Function -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package/Case TO-220-3
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