IRL520NPBF Infineon | Infineon agency

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Mfr. #：

IRL520NPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Through hole N channel 100 V 10A (Tc) 48W (Tc) TO-220AB

Datasheet:

In Stock:

6754

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	10 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	4 V, 10 V
On-Resistance (max) at Id, Vgs	180 mOhm @ 6 A, 10 V
Vgs(th) (max) at Id	2 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs	20 nC @ 5 V
Vgs (max)	±16 V
Various Vds Input Capacitance (Ciss) (max)	440 pF @ 25 V
FET Function	-
Power Dissipation (max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package/Case	TO-220-3

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