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IRF6668TRPBF Image

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Mfr. #:
IRF6668TRPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface Mount N Channel 80 V 55A (Tc) 2.8W (Ta), 89W (Tc) DIRECTFET? MZ
Datasheet:
In Stock:
12538
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 80 V
Current at 25°C - Continuous Drain (Id) 55 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at Id, Vgs 15 mOhm @ 12 A, 10 V
Vgs(th) (max) at Id 4.9 V @ 100 μA
Gate Charge?(Qg) (max) at Vgs 31 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 1320 pF @ 25 V
FET Function -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET? MZ
Package/Case DirectFET? Isocapacitive MZ
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