LOGO
LOGO
IHY30N160R2XKSA1 Image

img for reference only

Mfr. #:
IHY30N160R2XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT NPT 1600 V 60 A 312 W Through Hole PG-TO247HC-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
TrenchStop?
Packaging Tube
IGBT Type NPT
Voltage - Collector Emitter Breakdown (max) 1600 V
Current - Collector (Ic) (max) 60 A
Current - Collector Pulse (Icm) 90 A
Vce(on) (max) for Vge, Ic 2.1V @ 15V, 30A
Power - max 312 W
Switching Energy 2.53mJ
Input Type Standard
Gate Charge 94 nC
Td (on/off) at 25°C -/525ns
Test Conditions 600V, 30A, 10 Ohms, 15V
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package/Case TO-247-3 Variant
Supplier Device Package PG-TO247HC-3
Related models
  • BCX6810E6327HTSA1

    Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89

  • BCX6816E6327HTSA1

    Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89

  • BCX6910E6327HTSA1

    Transistor - Bipolar (BJT) - Single PNP 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89

  • BDP948E6433HTMA1

    Transistor - Bipolar (BJT) - Single PNP 45 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4

  • BDP954E6327HTSA1

    Transistor - Bipolar (BJT) - Single PNP 100 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10

  • BC857CWE6327BTSA1

    Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323

  • BC857CWE6433HTMA1

    Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323

  • BC858BWE6327HTSA1

    Transistor - Bipolar (BJT) - Single PNP 30 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd