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IPD80R1K4P7ATMA1 Image

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Mfr. #:
IPD80R1K4P7ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 800 V 4A (Tc) 32W (Tc) PG-TO252-2
Datasheet:
In Stock:
18277
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
CoolMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 800 V
Current at 25°C - Continuous Drain (Id) 4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 1.4 ohms @ 1.4A, 10V
Vgs(th) (max) at Id 3.5V @ 700μA
Gate Charge?(Qg) (max) at Vgs 10 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 250 pF @ 500 V
FET Function Super Junction
Power Dissipation (max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-2
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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