LOGO
LOGO
SKB15N60ATMA1 Image

img for reference only

Mfr. #:
SKB15N60ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT NPT 600 V 31 A 139 W Surface mount PG-TO263-3-2
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
IGBT Type NPT
Voltage - Collector-Emitter Breakdown (max) 600 V
Current - Collector (Ic) (max) 31 A
Current - Collector Pulse (Icm) 62 A
Vce(on) (max) at Vge, Ic 2.4V @ 15V, 15A
Power - max 139 W
Switching Energy 570μJ
Input Type Standard
Gate Charge 76 nC
Td (on/off) at 25°C 32ns/234ns
Test Conditions 400V, 15A, 21 Ohms, 15V
Reverse Recovery Time (trr) 279 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package/Case TO-263-3, D2Pak (2-Lead Tab), TO-263AB
Supplier Device Package PG-TO263-3-2
Related models
  • BCR 08PN H6327

    BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR

  • BCR 503 E6327

    BIPOLAR TRANSISTOR - PREBIASED AF TRANS DIGITAL BJT NPN 50V 500MA

  • BCR183E6327HTSA1

    Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

  • BCR 158W H6327

    BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR

  • BCR 108W H6327

    BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR

  • BCR 192 E6327

    Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

  • BCR 129 E6327

    Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

  • BCR 116W H6327

    BIPOLAR TRANSISTOR - PRE-BIASED AF DIGITAL TRANSISTOR

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd