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SPD04P10PGBTMA1 Image

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Mfr. #:
SPD04P10PGBTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount type P channel 100 V 4A (Tc) 38W (Tc) PG-TO252-3
Datasheet:
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
SIPMOS?
Packaging Tape and Reel (TR)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 4A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 1 Ohm @ 2.8A, 10V
Vgs(th) (max) at Id 4V @ 380μA
Gate Charge?(Qg) (max) at Vgs 12 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 319 pF @ 25 V
FET Function -
Power Dissipation (max) 38W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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