LOGO
LOGO
BSS123NH6433XTMA1 Image

img for reference only

Mfr. #:
BSS123NH6433XTMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 190mA (Ta) 500mW (Ta) PG-SOT23
Datasheet:
In Stock:
229732
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 190 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 6 Ohm @ 190 mA, 10 V
Vgs(th) (max) at Id 1.8 V @ 13 μA
Gate Charge?(Qg) (max) at Vgs 0.9 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 20.9 pF @ 25 V
FET function -
Power dissipation (max) 500mW (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-SOT23
Package/case TO-236-3, SC-59, SOT-23-3
Related models
  • IQE006NE2LM5ATMA1

    Power MOSFET, N-Channel, 25 V, 298 A, 0.0005 ohm, TSON, Surface Mount

  • IPD050N10N5ATMA1

    Power MOSFET, N-Channel, 100 V, 80 A, 0.0043 ohm, TO-252 (DPAK), Surface Mount

  • IMZA65R072M1HXKSA1

    Silicon Carbide MOSFET, SiC Trench, Single, N-Channel, 28 A, 650 V, 0.072 ohm, TO-247

  • IPAN60R360PFD7SXKSA1

    Power MOSFET, N-Channel, 600 V, 10 A, 0.303 ohm, TO-220FP, Through Hole

  • IMZA65R107M1HXKSA1

    SiC MOSFET, Single, N-Channel, 20 A, 650 V, 0.107 ohm, TO-247

  • IPP039N10N5AKSA1

    Power MOSFET, N-channel, 100 V, 100 A, 0.0032 ohm, TO-220, Through Hole

  • IPD60R360CFD7ATMA1

    Power MOSFET, N-Channel, 600 V, 7 A, 0.295 ohm, TO-252 (DPAK), Surface Mount

  • IPC100N04S5L1R5ATMA1

    Power MOSFET, N-Channel, 40 V, 100 A, 0.0012 ohm, TDSON, SMT

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd