IRGB4059DPBF Infineon | Infineon agency

img for reference only

Mfr. #：

IRGB4059DPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT Trench 600 V 8 A 56 W Through Hole TO-220AB

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Package	Tube
IGBT Type	Channel
Voltage - Collector Emitter Breakdown (max)	600 V
Current - Collector (Ic) (max)	8 A
Current - Collector Pulse (Icm)	16 A
Vce(on) (max) at Vge, Ic	2.05V @ 15V, 4A
Power - max	56 W
Switching Energy	35μJ (on), 75μJ (off)
Input Type	Standard
Gate Charge	9 nC
Td (on/off) at 25°C	25ns/65ns
Test Conditions	400V, 4A, 100 Ohms, 15V
Reverse Recovery Time (trr)	55 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-220-3
Supplier Device Package	TO-220AB

IPI80N04S403AKSA1

Power MOSFET, N-Channel, 40 V, 80 A, 0.0032 ohm, TO-262, Through Hole
IRFS7730TRLPBF

Power MOSFET, StrongIRFET™, N-channel, 75 V, 195 A, 0.0022 ohm, TO-263AB, Surface mount
SPP15N60C3XKSA1

Power MOSFET, N-channel, 600 V, 15 A, 0.25 ohm, TO-220, Through Hole
IRFR825TRPBF

Power MOSFET, N-Channel, 500 V, 6 A, 1.05 ohm, TO-252AA, Surface Mount
IPL60R125P7AUMA1

Power MOSFET, N-Channel, 600 V, 27 A, 0.104 ohm, VSON, Surface Mount
BSP320SH6327XTSA1

Power MOSFET, N-Channel, 60 V, 2.9 A, 0.09 ohm, SOT-223, Surface Mount
AUIRF7675M2TR

Power MOSFET, AEC-Q101, N-channel, 150 V, 18 A, 0.047 ohm, DirectFET M2, Surface mount
IPD80R450P7ATMA1

Power MOSFET, N-Channel, 800 V, 11 A, 0.38 ohm, TO-252 (DPAK), Surface Mount