IRG4RC10UDTRP Infineon | Infineon agency

img for reference only

Mfr. #：

IRG4RC10UDTRP

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT 600 V 8.5 A 38 W Surface Mount D-Pak

Datasheet:

In Stock:

5000+

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape and Reel (TR)
IGBT Type	-
Voltage - Collector-Emitter Breakdown (max)	600 V
Current - Collector (Ic) (max)	8.5 A
Current - Collector Pulse (Icm)	34 A
Vce(on) (max) at Vge, Ic	2.6V @ 15V, 5A
Power - max	38 W
Switching Energy	140μJ (on), 120μJ (off)
Input Type	Standard
Gate Charge	15 nC
Td (on/off) at 25°C	40ns/87ns
Test Conditions	480V, 5A, 100 Ohm, 15V
Reverse recovery time (trr)	28 ns
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Package/case	TO-252-3, DPak (2-lead tab), SC-63
Supplier device package	D-Pak

IRF8302MTRPBF

Power MOSFET, N-Channel, 30 V, 190 A, 0.0014 ohm, WDSON, SMT
IRFU5410PBF

Power MOSFET, P-Channel, 100 V, 13 A, 0.205 ohm, TO-251AA, Through Hole
IPN80R600P7ATMA1

Power MOSFET, N-Channel, 800 V, 8 A, 0.51 ohm, SOT-223, Surface Mount
BSC070N10LS5ATMA1

Power MOSFET, N-Channel, 100 V, 79 A, 0.006 ohm, TDSON, Surface Mount
IPZ60R099C7XKSA1

Power MOSFET, N-Channel, 600 V, 22 A, 0.085 ohm, TO-247, Through Hole
IPB60R145CFD7ATMA1

Power MOSFET, N-Channel, 600 V, 16 A, 0.127 ohm, TO-263 (D2PAK), Surface Mount
IPAN60R600P7SXKSA1

Power MOSFET, N-channel, 600 V, 6 A, 0.49 ohm, TO-220FP, Through Hole
IPD35N12S3L24ATMA1

Power MOSFET, N-Channel, 120 V, 35 A, 0.02 ohm, TO-252 (DPAK), Surface Mount