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IPW60R045CPAFKSA1 Image

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Mfr. #:
IPW60R045CPAFKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 600 V 60A (Tc) 431W (Tc) PG-TO247-3
Datasheet:
In Stock:
323
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS?
Package Dip
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 600 V
Current at 25°C - Continuous Drain (Id) 60A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 45 milliohms @ 44A, 10V
Vgs(th) (max) at Id 3.5V @ 3mA
Gate Charge?(Qg) (max) at Vgs 190 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 6800 pF @ 100 V
FET function -
Power dissipation (max) 431W (Tc)
Operating temperature -40°C ~ 150°C (TJ)
Mounting type Through hole
Supplier device package PG-TO247-3
Package/case TO-247-3
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