LOGO
LOGO
IRGR3B60KD2TRRP Image

img for reference only

Mfr. #:
IRGR3B60KD2TRRP
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT NPT 600 V 7.8 A 52 W Surface Mount D-Pak
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
IGBT Type NPT
Voltage - Collector-Emitter Breakdown (max) 600 V
Current - Collector (Ic) (max) 7.8 A
Current - Collector Pulse (Icm) 15.6 A
Vce(on) (max) at Vge, Ic 2.4V @ 15V, 3A
Power - max 52 W
Switching Energy 62μJ (on), 39μJ (off)
Input Type Standard
Gate Charge 13 nC
Td (on/off) at 25°C 18ns/110ns
Test Conditions 400V, 3A, 100 Ohm, 15V
Reverse recovery time (trr) 77 ns
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Package/case TO-252-3, DPak (2-lead tab), SC-63
Supplier device package D-Pak
Related models
  • IPT004N03LATMA1

    IPT004N03L Series 30 V 300 A SMT OptiMOSTM Power-MOSFET - PG-HSOF-8

  • IPT007N06NATMA1

    IPT007N06N Series 60 V 0.75 mOhm N-Channel OptiMOS? Power-Transistor - PG-HSOF-8-1

  • IPT008N06NM5LFATMA1

    60v, 454A, .8mohm, PG-HSOF-8, N-CH

  • IPT012N08N5ATMA1

    N-Channel 80 V 300 A 1.2 mΩ 178 nC OptiMOS 5 Power Transistor - HSOF-8

  • IPT020N10N3ATMA1

    IPT020N10N3 Series 100 V 2 mOhm N-Channel OptiMOS?3 Power-Transistor - PG-HSOF-8-1

  • IPT020N10N5ATMA1

    N-Channel 100 V 260 A 273 W SMT OptiMOSTM5 Power Transistor - PG-HSOF-8

  • IPT026N10N5ATMA1

    100V, 202A, 2.6mOhm, N-Channel, HSOF-8

  • IPT059N15N3ATMA1

    IPT059N15N3 Series 150 V 5.9 mOhm N-Channel OptiMOS?3 Power-Transistor - PG-HSOF-8-1

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd