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IRLB3036PBF Image

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Mfr. #:
IRLB3036PBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole N channel 60 V 195A (Tc) 380W (Tc) TO-220AB
Datasheet:
In Stock:
20239
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Fittings
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 195A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (Max) @ Id, Vgs 2.4 mOhm @ 165A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Gate Charge?(Qg) (Max) @ Vgs 140 nC @ 4.5 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 11210 pF @ 50 V
FET function -
Power dissipation (max) 380W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Through hole
Supplier device package TO-220AB
Package/case TO-220-3
IRLB3036
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