LOGO
LOGO
IRF9Z34NPBF Image

img for reference only

Mfr. #:
IRF9Z34NPBF
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole P channel 55 V 19A (Tc) 68W (Tc) TO-220AB
Datasheet:
In Stock:
76989
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
HEXFET?
Fittings
Available
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 55 V
Current at 25°C - Continuous Drain (Id) 19A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10V
On-Resistance (max) at Id, Vgs 100 mOhm @ 10A, 10V
Vgs(th) (max) at Id 4V @ 250μA
Gate Charge?(Qg) (max) at Vgs 35 nC @ 10 V
Vgs (max) ±20V
Various Vds Input Capacitance (Ciss) (max) 620 pF @ 25 V
FET Function -
Power Dissipation (max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
IRF9Z34
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd