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SPP80P06PHXKSA1 Image

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Mfr. #:
SPP80P06PHXKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Through hole P channel 60 V 80A (Tc) 340W (Tc) PG-TO220-3-1
Datasheet:
In Stock:
6148
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
SIPMOS?
Fittings
Available
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 60 V
Current at 25°C - Continuous Drain (Id) 80 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 10 V
On-Resistance (max) at different Id, Vgs 23 mOhm @ 64 A, 10 V
Vgs(th) (max) at different Id 4 V @ 5.5 mA
Gate Charge?(Qg) (max) at different Vgs 173 nC @ 10 V
Vgs (max) ±20 V
Various Vds Input Capacitance (Ciss) (Max) 5033 pF @ 25 V
FET Function -
Power Dissipation (Max) 340W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package/Case TO-220-3
SPP80P06
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