BSP149H6327XTSA1 Infineon | Infineon agency

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Mfr. #：

BSP149H6327XTSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 200 V 660mA (Ta) 1.8W (Ta) PG-SOT223-4

Datasheet:

In Stock:

27721

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
	SIPMOS?
	Tape and Reel (TR)
	On Sale
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	200 V
Current at 25°C - Continuous Drain (Id)	660 mA (Ta)
Drive Voltage (Rds On Max, Rds On Min)	0 V, 10 V
On-Resistance (Max) at Different Id, Vgs	1.8 Ohm @ 660 mA, 10 V
Vgs(th) (Max) at Different Id	1 V @ 400 μA
Gate Charge?(Qg) (Max) at Different Vgs	14 nC @ 5 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	430 pF @ 25 V
FET function	Depletion mode
Power dissipation (max)	1.8W (Ta)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	PG-SOT223-4
Package/case	TO-261-4, TO-261AA
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