IPD122N10N3GATMA1 Infineon | Infineon agency

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Mfr. #：

IPD122N10N3GATMA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N channel 100 V 59A (Tc) 94W (Tc) PG-TO252-3

Datasheet:

In Stock:

34756

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	OptiMOS?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	59 A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	6 V, 10 V
On-Resistance (max) at Id, Vgs	12.2 mOhm @ 46 A, 10 V
Vgs(th) (max) at Id	3.5 V @ 46 μA
Gate Charge?(Qg) (max) at Vgs	35 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (max)	2500 pF @ 50 V
FET Function	-
Power Dissipation (max)	94W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package/Case	TO-252-3, DPak (2-Lead Tab), SC-63

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