LOGO
LOGO
IPD60N10S4L12ATMA1 Image

img for reference only

Mfr. #:
IPD60N10S4L12ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 100 V 60A (Tc) 94W (Tc) PG-TO252-3-313
Datasheet:
In Stock:
71727
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
Automotive, AEC-Q101, HEXFET?
Tape and Reel (TR)
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 100 V
Current at 25°C - Continuous Drain (Id) 60A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5V, 10V
On-Resistance (max) at Id, Vgs 12 mOhm @ 60A, 10V
Vgs(th) (max) at Id 2.1V @ 46μA
Gate Charge?(Qg) (max) at Vgs 49 nC @ 10 V
Vgs (max) ±16V
Input capacitance (Ciss) (max) 3170 pF @ 25 V
FET function -
Power dissipation (max) 94W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting type Surface mount
Supplier device package PG-TO252-3-313
Package/case TO-252-3, DPak (2-lead tab), SC-63
IPD60N10
Related models
Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd