IPD85P04P407ATMA2 Infineon | Infineon agency

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Mfr. #：

IPD85P04P407ATMA2

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount type P channel 40 V 85A (Tc) 88W (Tc) PG-TO252-3-313

Datasheet:

In Stock:

26222

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
	Infineon Technologies
	Automotive, AEC-Q101, OptiMOS?-P2
	Tape and Reel (TR)
	Available
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	40 V
Current at 25°C - Continuous Drain (Id)	85 A (Tc)
On-Resistance (max) at Id, Vgs	7.3 mOhm @ 85 A, 10 V
Vgs(th) (max) at Id	4 V @ 150 μA
Gate Charge?(Qg) (max) at Vgs	89 nC @ 10 V
Vgs (max)	±20 V
Various Vds Input Capacitance (Ciss) (Max)	6085 pF @ 25 V
FET Function	-
Power Dissipation (Max)	88W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-313
Package/Case	TO-252-3, DPak (2-Lead Tab), SC-63
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