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IPD30N03S4L09ATMA1 Image

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Mfr. #:
IPD30N03S4L09ATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 30 V 30A (Tc) 42W (Tc) PG-TO252-3-11
Datasheet:
In Stock:
47972
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series OptiMOS?
Packaging Tape and Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 30 V
Current at 25°C - Continuous Drain (Id) 30 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 9 mOhm @ 30 A, 10 V
Vgs(th) (max) at Id 2.2 V @ 13 μA
Gate Charge?(Qg) (max) at Vgs 20 nC @ 10 V
Vgs (max) ±16 V
Various Vds Input Capacitance (Ciss) (max) 1520 pF @ 15 V
FET Function -
Power Dissipation (max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-11
Package/Case TO-252-3, DPak (2-Lead Tab), SC-63
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