IRFHM3911TRPBF Infineon | Infineon agency

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Mfr. #：

IRFHM3911TRPBF

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Surface mount N-channel 100 V 3.2A (Ta), 20A (Tc) 2.8W (Ta), 29W (Tc) 8-PQFN (3x3)

Datasheet:

In Stock:

34216

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	HEXFET?
Packaging	Tape and Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss)	100 V
Current at 25°C - Continuous Drain (Id)	3.2A (Ta), 20A (Tc)
Drive Voltage (Rds On Max, Rds On Min)	10V
On-Resistance (max) at Id, Vgs	115 mOhm @ 6.3A, 10V
Vgs(th) (max) at Id	4V @ 35μA
Gate Charge?(Qg) (max) at Vgs	26 nC @ 10 V
Vgs (max)	±20V
Input capacitance (Ciss) (max)	760 pF @ 50 V
FET function	-
Power dissipation (max)	2.8W (Ta), 29W (Tc)
Operating temperature	-55°C ~ 150°C (TJ)
Mounting type	Surface mount
Supplier device package	8-PQFN (3x3)
Package/case	8-PowerTDFN

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