LOGO
LOGO
BSZ060NE2LSATMA1 Image

img for reference only

Mfr. #:
BSZ060NE2LSATMA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Surface mount N channel 25 V 12A (Ta), 40A (Tc) 2.1W (Ta), 26W (Tc) PG-TSDSON-8-FL
Datasheet:
In Stock:
57522
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Infineon Technologies
OptiMOS?
Tape and Reel (TR)
Available
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss) 25 V
Current at 25°C - Continuous Drain (Id) 12 A (Ta), 40 A (Tc)
Drive Voltage (Rds On Max, Rds On Min) 4.5 V, 10 V
On-Resistance (max) at Id, Vgs 6 mOhm @ 20 A, 10 V
Vgs(th) (max) at Id 2 V @ 250 μA
Gate Charge?(Qg) (max) at Vgs 9.1 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) (max) 670 pF @ 12 V
FET function -
Power dissipation (max) 2.1W (Ta), 26W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting type Surface mount
Supplier device package PG-TSDSON-8-FL
Package/case 8-PowerTDFN
BSZ060
Related models
  • IMBG65R260M1HXTMA1

    SILICON CARBIDE MOSFET PG-TO263-

  • IR2101

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IR2104

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IR2106

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IR2108

    Half-bridge Gate Driver IC Non-Inverting 8-PDIP

  • IPP65R155CFD7XKSA1

    Through hole N channel 650 V 15A (Tc) 77W (Tc) PG-TO220-3

  • IR2130STR

    Half-bridge Gate Driver IC Inverter 28-SOIC

  • F4150R12KS4BOSA1

    IGBT Module Three Phase Inverter 1200 V 180 A 960 W Base Mount Module

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd