LOGO
LOGO
IRG4BC20UD Image

img for reference only

Mfr. #:
IRG4BC20UD
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT 600 V 13 A 60 W Through hole TO-220AB
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Tube
IGBT Type -
Voltage - Collector Emitter Breakdown (max) 600 V
Current - Collector (Ic) (max) 13 A
Current - Collector Pulse (Icm) 52 A
Vce(on) (max) at Vge, Ic 2.1V @ 15V, 6.5A
Power - max 60 W
Switching Energy 160μJ (on), 130μJ (off)
Input Type Standard
Gate Charge 27 nC
Td (on/off) at 25°C 39ns/93ns
Test Conditions 480V, 6.5A, 50 Ohms, 15V
Reverse Recovery Time (trr) 37 ns
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package/Case TO-220-3
Supplier Device Package TO-220AB
Related models
  • V61-14.80MS

    Discrete semiconductor modules STD THYR/DIODEN DISC

  • V61-14.80N

    Discrete semiconductor modules STD THYR/DIODEN DISC

  • V100-35.200N

    Discrete semiconductor modules STD THYR/DIODEN DISC

  • ETT510N16P60HPSA1

    Discrete semiconductor module THYR / DIODE MODULE DK

  • TD250N14KOF

    Discrete Semiconductor Module 1400V 410A

  • D291S45T

    Discrete semiconductor module Fast Diode 4500V 290A

  • DZ540N22K

    Discrete Semiconductor Module 2200V 1150A

  • DD261N22K

    Discrete Semiconductor Module 2200V 410A

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd