LOGO
LOGO
BCR 103L3 E6327 Image

img for reference only

Mfr. #:
BCR 103L3 E6327
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 100 mA 140 MHz 250 mW Surface Mount PG-TSLP-3-4
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
Transistor Type NPN - Pre-Bias
Current - Collector (Ic) (max) 100 mA
Voltage - Collector Emitter Breakdown (max) 50 V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter (R2) 2.2 kOhms
DC Current Gain (hFE) (min) at Ic, Vce 20 @ 20mA, 5V
Vce Saturation Voltage Drop (max) at Ib, Ic 300mV @ 1mA, 20mA
Current - Collector Cutoff (max) 100nA (ICBO)
Frequency - Transition 140 MHz
Power - Max 250 mW
Mounting Type Surface Mount
Package/Case SC-101, SOT-883
Supplier Device Package PG-TSLP-3-4
Related models
  • BSC079N10NSGATMA1

    N-Channel 100 V 100 A 7.9 mΩ 66 nC Surface Mount OptiMOS Power Mosfet - TDSON-8

  • BSC080N03MSGATMA1

    BSC080N03MS Series 30 V 8 mOhm N-Channel OptiMOS?3 Power-Mosfet - PG-TDSON-8

  • BSC080P03LSGAUMA1

    BSC080P03LS Series 30 V 8 mOhm P-Channel OptiMOS?3 Power Transistor - PG-TDSON-8

  • BSC082N10LSGATMA1

    BSC082N10LS Series 100 V 8.2 mOhm N-Channel OptiMOS?2 Power Transistor - PG-TDSON-8

  • BSC084P03NS3GATMA1

    BSC084P03NS3 Series 30 V 8.4 mOhm P-Channel OptiMOS?3 Power Transistor - PG-TDSON-8

  • BSC0901NSATMA1

    MOSFET N-Ch 30V 100A TDSON-8 OptiMOS

  • BSC0901NSIATMA1

    30V, 100A, 2mohm, N-Channel, SuperSO8

  • BSC0902NSATMA1

    Single N-Channel 30 V 2.6 mOhm 26 nC OptiMOS? Power Mosfet - TDSON-8

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd