LOGO
LOGO
IHW30N65R6XKSA1 Image

img for reference only

Mfr. #:
IHW30N65R6XKSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
IGBT 650 V 65 A 163 W Through hole PG-TO247-3
Datasheet:
In Stock:
5000+
Request Quote
Part Number*Qty*ManufacturerTarget Price
Please provide your contact information and get back to you as soon as possible
Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Package Tube
IGBT Type -
Voltage - Collector Emitter Breakdown (max) 650 V
Current - Collector (Ic) (max) 65 ​​A
Current - Collector Pulse (Icm) 90 A
Vce(on) (max) at Vge, Ic 1.6V @ 15V, 30A
Power - max 163 W
Switching Energy 730μJ (on), 260μJ (off)
Input Type Standard
Gate Charge 120 nC
Td (on/off) at 25°C 13ns/161ns
Test Conditions 400V, 30A, 10 Ohms, 15V
Reverse Recovery Time (trr) 90 ns
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package/Case TO-247-3
Supplier Device Package PG-TO247-3
Related models
  • IPI65R310CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 11.4A; 104.2W; PG-TO262-3

  • IPI65R380C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 10.6A; 83W; PG-TO262-3

  • IPI65R420CFDXKSA1

    Transistor: N-MOSFET; unipolar; 650V; 8.7A; 83.3W; PG-TO262-3

  • IPI65R600C6XKSA1

    Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO262-3

  • IPI70R950CEXKSA1

    Transistor: N-MOSFET; unipolar; 700V; 4.7A; 68W; PG-TO262-3

  • IPI80N06S407AKSA2

    Transistor: N-MOSFET; OptiMOS? -T2; unipolar; 60V; 58A; Idm: 320A

  • IPP60R099P6XKSA1

    Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3

  • IPP60R099P7

    Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3

Infineon hot selling models
Copyright © 2016-2024 Shenzhen Xinmi Technology Co., Ltd