IGW15T120FKSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

IGW15T120FKSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

IGBT NPT, Trench Field Stop 1200 V 30 A 110 W Through Hole PG-TO247-3-1

Datasheet:

In Stock:

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	TrenchStop?
Package	Tube
IGBT Type	NPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (max)	1200 V
Current - Collector (Ic) (max)	30 A
Current - Collector Pulse (Icm)	45 A
Vce(on) (max) at Vge, Ic	2.2V @ 15V, 15A
Power - max	110 W
Switching Energy	2.7mJ
Input Type	Standard
Gate Charge	85 nC
Td (on/off) at 25°C	50ns/520ns
Test Conditions	600V, 15A, 56 Ohm, 15V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package/Case	TO-247-3
Supplier Device Package	PG-TO247-3-1

BCX6810E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6816E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6910E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BDP948E6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4
BDP954E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 100 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10
BC857CWE6327BTSA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC857CWE6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC858BWE6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 30 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323