BDP949E6327HTSA1 Infineon | Infineon agency

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Mfr. #：

BDP949E6327HTSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single NPN 60 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape and Reel (TR)
Transistor Type	NPN
Current - Collector (Ic) (max)	3 A
Voltage - Collector-Emitter Breakdown (max)	60 V
Vce Saturation Voltage Drop at Different Ib, Ic (max)	500mV @ 200mA, 2A
Current - Collector Cutoff (max)	100nA (ICBO)
DC Current Gain (hFE) at Different Ic, Vce (min)	100 @ 500mA, 1V
Power - max	5 W
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package/Case	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4-10

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