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BCR162E6327HTSA1 Image

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Mfr. #：
BCR162E6327HTSA1
Mfr.:
Infineon Technologies
Batch:
23+
Description:
Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23
Datasheet:
Datasheet
In Stock:
5000+
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Specifications
Frequently Asked Question
Product AttributeAttribute Value
Manufacturer Infineon Technologies
Series -
Packaging Tape and Reel (TR)
Transistor Type PNP - Pre-Bias
Current - Collector (Ic) (max) 100 mA
Voltage - Collector Emitter Breakdown (max) 50 V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter (R2) 4.7 kOhms
DC Current Gain (hFE) (min) at Ic, Vce 20 @ 5mA, 5V
Vce Saturation Voltage Drop (max) at Ib, Ic 300mV @ 500μA, 10mA
Current - Collector Cutoff (max) 100nA (ICBO)
Frequency - Transition 200 MHz
Power - Max 200 mW
Mounting Type Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23
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