BCR192E6327HTSA1 Infineon | Infineon agency

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Mfr. #：

BCR192E6327HTSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single, Pre-Biased) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount PG-SOT23

Datasheet:

In Stock:

5000+

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Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape and Reel (TR)
Transistor Type	PNP - Pre-Bias
Current - Collector (Ic) (max)	100 mA
Voltage - Collector Emitter Breakdown (max)	50 V
Resistor - Base (R1)	22 kOhms
Resistor - Emitter (R2)	47 kOhms
DC Current Gain (hFE) (min) at Ic, Vce	70 @ 5mA, 5V
Vce Saturation Voltage Drop (max) at Ib, Ic	300mV @ 500μA, 10mA
Current - Collector Cutoff (max)	100nA (ICBO)
Frequency - Transition	200 MHz
Power - Max	200 mW
Mounting Type	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23

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