BCR503E6327HTSA1 Infineon | Infineon agency

img for reference only

Mfr. #：

BCR503E6327HTSA1

Mfr.:

Infineon Technologies

Batch:

23+

Description:

Transistor - Bipolar (BJT) - Single, Pre-Biased) NPN - Pre-Biased 50 V 500 mA 100 MHz 330 mW Surface Mount PG-SOT23

Datasheet:

In Stock:

18631

Request Quote

Part Number*	Qty*	Manufacturer	Target Price

Please provide your contact information and get back to you as soon as possible

Specifications

Frequently Asked Question

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Series	-
Packaging	Tape and Reel (TR)
Transistor Type	NPN - Pre-Bias
Current - Collector (Ic) (max)	500 mA
Voltage - Collector Emitter Breakdown (max)	50 V
Resistor - Base (R1)	2.2 kOhms
Resistor - Emitter (R2)	2.2 kOhms
DC Current Gain (hFE) (min) at Ic, Vce	40 @ 50mA, 5V
Vce Saturation Voltage Drop (max) at Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (max)	100nA (ICBO)
Frequency - Transition	100 MHz
Power - Max	330 mW
Mounting Type	Surface Mount
Package/Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	PG-SOT23

BCX6810E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6816E6327HTSA1

Transistor - Bipolar (BJT) - Single NPN 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BCX6910E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 20 V 1 A 100MHz 3 W Surface Mount PG-SOT89
BDP948E6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4
BDP954E6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 100 V 3 A 100MHz 5 W Surface Mount PG-SOT223-4-10
BC857CWE6327BTSA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC857CWE6433HTMA1

Transistor - Bipolar (BJT) - Single PNP 45 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323
BC858BWE6327HTSA1

Transistor - Bipolar (BJT) - Single PNP 30 V 100 mA 250MHz 250 mW Surface Mount PG-SOT323